Surface Mount Components

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GaAs pHEMT & MESFET
To 40 GHz
BeRex: GaAs pHEMT and MESFET devices in both Bare Die and Packaged format for Power and Low Noise applications. 0.15 and 0.25 micron gate length and up to 2400 micron gate width.

InGaP MMIC
To 4 GHz

InGap Bare Die MMIC amplifiers and gain blocks up to 2 watts and 25 dB  gain.

5-4000 MHz RF Semi-conductors, Wide Band Gain Blocks, Internally Matched IF Amplifiers, Wide Band Drive Amplifiers, Wide Band Medium Power Amplifiers, Wideband Low Noise Amplifiers, Dividers.

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